RU4M [BL Galaxy Electrical]

HIGH EFFICIENCY RECTIFIER; 高效率整流
RU4M
型号: RU4M
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

HIGH EFFICIENCY RECTIFIER
高效率整流

二极管 功效 快速恢复二极管
文件: 总2页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
RU4M(Z) --- RU4AM(Z)  
BL  
VOLTAGE RANGE: 400 --- 600 V  
CURRENT: 3.5 A  
HIGH EFFICIENCY RECTIFIER  
FEATURES  
Low cost  
Diffused junction  
Low leakage  
DO - 27  
Low forward voltage drop  
High current capability  
Easily cleaned with freon, alcohol, lsopropand and  
similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case: JEDEC DO-27, molded plastic  
Terminals: Axial leads,solderable per  
MIL-STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.041ounces,1.15 grams  
Mounting: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
RU4M  
RU4AM  
UNITS  
Maximum peak repetitive reverse voltage  
Maximum RMS voltage  
400  
280  
400  
600  
420  
600  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forw ard rectified current  
A
3.5  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
10ms single half-sine-w ave  
superimplsed on rated load  
70.0  
A
IFSM  
@TJ=125  
Maximum instantaneous forw ard voltage  
@ 3.5A  
1.3  
VF  
IR  
V
A
Maximum reverse current  
@TA=25  
10.0  
at rated DC blocking voltage @TA=100  
300.0  
100  
Maximum reverse recovery time  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
trr  
ns  
(Note2)  
(Note3)  
70  
50  
CJ  
pF  
/ W  
8
Rθ  
JL  
Operating junction temperature range  
- 55 ----- + 150  
TJ  
Storage temperature range  
- 55 ----- + 150  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.  
3. Thermal resistance junction to ambient.  
1.  
Document Number 0262047  
BLGALAXY ELECTRICAL  
RATINGS AND CHARACTERISTIC CURVES  
RU4M(Z)---RU4AM(Z)  
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC  
t r r  
50  
10  
N 1.  
N 1.  
+0.5A  
D.U.T.  
0
-0 .25A  
(+)  
PULSE  
GENERATOR  
(NOTE2)  
25VDC  
(approx)  
(-)  
OSCILLOSCOPE  
(NOTE1)  
1
NONIN-  
DUCTIVE  
-1 .0A  
1 c m  
SETTIMEBASEFOR10/20 ns/cm  
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ  
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50  
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC  
FIG.3 -- FORWARD DERATING CURVE  
100  
10  
3.5  
3.0  
TJ=25  
Pulse Width=300µS  
1.0  
2.0  
Single Phase  
Half Wave 60Hz  
Resistive or  
Inductive Load  
0.1  
1.0  
0
0.04  
0.01  
0
25  
50  
75  
100  
125  
150  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8 2  
AMBIENT TEMPERATURE,  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
FIG.4 -- PEAK FORWARD SURGE CURRENT  
FIG.5-- TYPICAL JUNCTION CAPACITANCE  
70  
200  
60  
TJ=25  
8.3ms Single Half  
Sine-Wave  
50  
RU4M  
40  
30  
100  
70  
50  
20  
10  
TJ=25  
RU4AM  
20  
10  
0
1
5
10  
50  
0.1 0.2 0.4  
1
2
4
10 20  
40  
100  
NUMBEROF CYCLES AT60Hz  
REVERSE VOLTAGE,VOLTS  
www.galaxycn.com  
Document Number 0262047  
BLGALAXY ELECTRICAL  
2.  

相关型号:

RU4MGF

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A
GULFSEMI

RU4MV

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
SANKEN

RU4MV1

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
SANKEN

RU4MV3

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
SANKEN

RU4MV4

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
SANKEN

RU4MVO

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
SANKEN

RU4MW

暂无描述
SANKEN

RU4MWK

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
SANKEN

RU4MWS

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
SANKEN

RU4MZ

HIGH EFFICIENCY RECTIFIER
BL Galaxy Ele

RU4S-C

RU Series - General Purpose Relays
ETC

RU4S-M

RU Series - General Purpose Relays
ETC